8~12GHz 150W GaN MMIC

Semiconductors/MMICs/ICs

The HYPA08001200P52P from Haoyi Technologiess a GaN-on-SiC Power Amplifier that operates from 8000 to 12000 MHz. It provides an output power of 52 dBm (150 W),PAE of 40% and has a power gain of 24 dB under 50V power supply. This amplifier is designed using GaN-on-SiC high-electron-mobility transisto


规格参数

  • 产品型号:
  • 工作模式:
  • 饱和功率输出: dBm(典型), dBm(最小)
  • PAE:
  • 功率增益:
  • 谐波抑制 (dBc):
  • 集成方式:
  • 电源:
  • 重量:
购物车 0
定制需求
购物车
您的购物车是空的
联系信息
快速联系: