4~8GHz 120W GaN MMIC

Semiconductors/MMICs/ICs

The HYPA04000800P51P from Haoyi Technologiess a GaN-on-SiC Power Amplifier that operates from 4000 to 8000 MHz. It provides an output power of 51 dBm (12 W),PAE of 35% and has a power gain of 24 dB under 40V power supply. This amplifier is designed using GaN-on-SiC high-electron-mobility transistors


规格参数

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  • 饱和功率输出: dBm(典型), dBm(最小)
  • PAE:
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  • 谐波抑制 (dBc):
  • 集成方式:
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